Ge-Source Based L-Shaped Tunnel Field Effect Transistor for Low Power Switching Application

In this work, the performance of heterojunction L-Tunnel Field Effect Transistor (LTFET) has been analyzed with different engineering techniques such as bandgap engineering, pocket work-function and gate dielectric respectively. The electrical characteristics device investigated by using Synopsys Sentaurus TCAD tool compared some recent other TFETs. in terms DC well AC analysis offers ON-state current 2.12*10?5 A?m?1, OFF-state 1.09*10?13 ratio ~108 sub-threshold slope (SS) 21 mV/decade threshold voltage 0.26 V to conventional Si/Ge source L-shaped TFETs without simulation result. suppress leakage degrading ON current, SS proposed device. simplified fabrication steps have also discussed. L-TFET is free from ambipolarity issues can be used develop low-power switching devices.